AO3400A — 30V 5.7A N-channel MOSFET, SOT-23, RDS(on) 26.5mOhm
Manufacturer: Alpha & Omega Semiconductor Package: SOT-23 LCSC: C20917 Datasheet: https://aosmd.com/pdfs/datasheet/AO3400A.pdf
Description
The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Suitable for use as a load switch or in PWM applications. SOT-23 package with 30V drain-source voltage and 5.7A continuous drain current.
Electrical Specifications
- VDS: 30V
- VGS: ±12V
- ID (continuous): 5.7A @ 25°C
- ID (pulsed): 30A
- RDS(on) @ VGS=10V: < 26.5mΩ
- RDS(on) @ VGS=4.5V: < 32mΩ
- RDS(on) @ VGS=2.5V: < 48mΩ
- Power Dissipation: 1.4W @ 25°C
- VGS(th): 0.65–1.45V (typ 1.05V)
- Qg (total gate charge): 7nC @ VGS=4.5V
- Ciss: 630pF
- Coss: 75pF
- Crss: 50pF
- td(on) / tr: 3ns / 2.5ns
- td(off) / tf: 25ns / 4ns
- Body Diode VSD: 0.7V @ 1A
- RθJA: 90°C/W (steady-state)
- TJ Range: -55 to 150°C
Pin Configuration
Package: SOT-23
- Pin 1: G — Gate
- Pin 2: S — Source
- Pin 3: D — Drain
Absolute Maximum Ratings (TA=25°C)
- Drain-Source Voltage (VDS): 30V
- Gate-Source Voltage (VGS): ±12V
- Continuous Drain Current (ID): 5.7A @ 25°C, 4.7A @ 70°C
- Pulsed Drain Current (IDM): 30A
- Power Dissipation (PD): 1.4W @ 25°C, 0.9W @ 70°C
- Junction Temperature: -55 to 150°C
Gate Drive Requirements
- Threshold voltage (VGS(th)): 0.65V min, 1.05V typ, 1.45V max
- Fully enhanced at VGS = 4.5V (RDS(on) < 32mΩ)
- Logic-level compatible: works with 3.3V gate drive (RDS(on) < 48mΩ at VGS=2.5V)
- For lowest RDS(on), drive gate to 10V (< 26.5mΩ)
- Total gate charge Qg = 7nC — very fast switching
Switching Characteristics
- Turn-on delay: 3ns, rise time: 2.5ns
- Turn-off delay: 25ns, fall time: 4ns
- Gate charge breakdown: Qgs=1.3nC, Qgd=1.8nC, Qg=7nC
- Input capacitance: Ciss=630pF @ VDS=15V
Body Diode
- Forward voltage: VSD = 0.7V @ 1A
- Maximum continuous current: 2A
- Reverse recovery time: trr = 8.5ns, Qrr = 2.6nC
Thermal Characteristics
- RθJA = 90°C/W (steady-state on 1in² FR-4 with 2oz Cu)
- RθJA = 125°C/W (t ≤ 10s pulse)
- RθJL = 80°C/W
- Derate linearly above 25°C: PD = (150°C - TA) / RθJA
Typical Applications
- Load switching (battery-powered devices, power banks)
- PWM motor control (small DC motors, fans)
- LED driver switching
- Power path management
- Level shifting (high-side with charge pump, or low-side direct)
Design Notes
- For 3.3V MCU direct gate drive: expect RDS(on) ~ 48mΩ max at VGS=2.5V
- For 5V MCU direct gate drive: expect RDS(on) ~ 32mΩ max at VGS=4.5V
- SOT-23 thermal limit: max ~1.4W continuous without additional heatsinking
- At 5.7A continuous, power dissipation = I²×RDS(on) = 5.7²×0.0265 = 0.86W (within limit at 25°C)
- Place ground plane copper under SOT-23 pad for improved thermal performance
- Gate resistor (10-100Ω) recommended for EMI-sensitive applications